| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an SGT (Surrounding Gate Transistor) having a structure in which a transistor is formed by a work function difference between a metal and a semiconductor.SOLUTION: A semiconductor device comprises: a fin-like semiconductor layer; a first insulation film formed around the fin-like semiconductor layer; a first metal film formed around the first insulation film; a columnar semiconductor layer formed on the fin-like semiconductor layer; a gate insulation film formed around the columnar semiconductor layer; a gate electrode which is composed of a third metal and formed around the gate insulation film; gate wiring connected to the gate electrode; a second insulation film formed around an upper side wall of the columnar semiconductor layer; and a second metal film formed around the second insulation film. An upper part of the columnar semiconductor layer and the second metal film are connected, and an upper part of the fin-like semiconductor layer and the first metal film are connected.</p> |
