非挥发性记忆体之冗余系统;REDUNDANCY SYSTEM FOR NON-VOLATILE MEMORY

摘要

描述一种用于非挥发性记忆体(NVM)的冗余方案。此冗余方案提供用于在非挥发性记忆体中使用缺陷胞元以增加良率的机制。该演算法系依据当在胞元群组中侦测到缺陷胞元时，针对将被编程到该胞元群组的资料，反相该编程资料。将缺陷胞元偏置于「1」或「0」的逻辑状态，其系有效地被预设来储存其偏置逻辑状态。具有与胞元之偏置逻辑状态互补的逻辑状态之待储存于缺陷胞元中的资料位元，造成编程资料被反相且被编程。将反相状态位元编程以指示编程资料的反相状态。在读取期间，反相状态位元使已储存的资料被再次反相为其原始编程资料状态。 A redundancy scheme for Non-Volatile Memories (NVM) is described. This redundancy scheme provides means for using defective cells in non-volatile memories to increase yield. The algorithm is based on inverting the program data for data being programmed to a cell grouping when a defective cell is detected in the cell grouping. Defective cells are biased to either “1” or “0”