| 摘要 |
<p>For a method for manufacturing a reverse-conducting insulated gate bipolar transistor (RC-IGBT) (10) with a seventh layer (7,7') formed as a gate electrode and a first electrical contact (8) on a first main side (101) and a second electrical contact (9) on a second main side (102), which is opposite the first main side (101), a wafer (11) of a first conductivity type with a first side (111) and a second side (112) opposite the first side (111) is provided. For the manufacturing of the RC-IGBT (10) on the second main side (112) the following steps are performed:
A ninth layer (32) of the first conductivity type or of a second conductivity type is created on the second side (112). A mask (12) with an opening (121) is created on the ninth layer (32) and those parts of the ninth layer (32), on which the opening (121) of the mask (12) is arranged, are removed, the remaining parts of the ninth layer (32) forming a third layer (3). Afterwards for the manufacturing of a second layer (2) of a different conductivity type than the third layer (3), ions are implanted into the wafer (11) on the second side (112) into those parts of the wafer (11), on which the at least one opening (121) is arranged.</p> |
