| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve an output of a nitride semiconductor laser device and stabilize the shape of laser light by providing an etching surface protruded from a resonance surface substantially perpendicularly to the resonance surface, and forming on the etching surface a thin film reflection mirror for reflecting laser light. SOLUTION: An n type layer 12, an active layer 13, and a p type layer 14 are stack in order on a saphire substrate 11 to construct a double hetero structure. In the present laser device, a reflection mirror 20 is formed on an etching surface corresponding to the direction of laser emission for reflecting the laser light. With the reflection mirror 20 formed as such the laser light is prevented from transmitting through the n type layer 12 and the saphire substrate 11 so that it is not correspondingly absorbed to improve an output thereof. The reflection mirror 20 when being formed with a mertal thin film is formed, separated whereby the metal thin film makes contact with an electrode to prevent short-circuiting from being produced between electrodes.</p> |
