半导体元件及其制作方法;SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

本发明是揭露一种制作半导体元件的方法。首先提供一基底，然后形成一介质层于基底上。接着形成一堆叠结构于介质层上、图案化堆叠结构以形成一闸极结构于介质层上、形成一衬垫层于介质层及闸极结构上以及去除部分衬垫层及部分介质层以形成一侧壁子。; forming an interfacial layer on the substrate; forming a stack structure on the interfacial layer; patterning the stack structure to form a gate structure on the interfacial layer; forming a liner on the interfacial layer and the gate structure; and removing part of the liner and part of the interfacial layer for forming a spacer.