| 摘要 |
<p>A multilevel interconnect structure (10) is provided. The multilevel interconnect structure includes at least three levels of interconnect (conductors) formed according to one exemplary embodiment. Two of the three levels (12) of conductors are staggered from each other (16) in separate vertical and horizontal planes. A third conductor (16) is advantageously spaced a lateral distance between at least a portion of two second conductors (26). The third conductor is also placed in an elevational level below or possibly above the second conductor so as to reduce the capacitive coupling therebetween. By staggering the second and third conductors, high density interconnect can be achieved with minimal propagation delay and cross coupling.</p> |
