发明名称 Ultraviolet semiconductor sensor device and method of measuring ultraviolet radiation
摘要 A photodiode (2) and a further photodiode (3) are arranged in a substrate (1) at or near a main surface (10). The photodiodes are formed and arranged in such a manner that in case of incident ultraviolet radiation (26) the electric signal from the photodiode (2) is larger than the further electric signal from the further photodiode (3). In particular, the first photodiode may be more sensitive to ultraviolet radiation than the further photodiode. The electric signal from the photodiode is attenuated by the further electric signal and thus yields an electric signal primarily measuring the incident ultraviolet radiation. The attenuation of the electric signal from the first photodiode may be achieved internally using an integrated circuit (25) or externally using a separate device.
申请公布号 EP2775275(B1) 申请公布日期 2015.12.16
申请号 EP20130162745 申请日期 2013.04.08
申请人 AMS AG 发明人 DIERSCHKE, EUGENE G.;BISHOP, TODD;MANNINGER, MARIO
分类号 G01J1/42 主分类号 G01J1/42
代理机构 代理人
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