| 摘要 |
<p>A bi-directional bipolar junction transistor (BJT) comprising a base region with a first conductivity type, first and second collector/emitter (CE) regions, each of a second conductivity type adjacent to opposite ends of the base region, wherein the base is lightly doped relative to the collector/emitter regions. There can also be a second transistor whose input/output is connected to a base connection of the first transistor. The base region can be wider in a direction between said ends of said base region than each of said CE regions. The transistor can also have a buried layer of the second conductivity type disposed between the CE region and the base region. The transistor may have a field stop layer of the first conductivity type formed between the emitter region and the base region. The bipolar junction transistor can be used in a driver circuit, a matrix converter or a relay circuit. Also provided is a circuit breaker which may comprise a bipolar junction transistor.</p> |
