发明名称 VSS-sensing amplifier
摘要 <p>Some embodiments regard a circuit comprising a memory cell (MC), a first data line (BL), a second data line (BLB), a sensing circuit (SENPAIR) coupled to the first data line (BL) and the second data line (BLB), a node (NVR) selectively coupled to at least three voltage sources via at least three respective switches (N7-N9), a fourth switch (N2), and a fifth switch (N3). A first voltage source is configured to supply a retention voltage (VREST) to the node (NVR) via a first switch (N9). A second voltage source is configured to supply a ground reference voltage (VSS) to the node (NVR) via a second switch (N8), and a third voltage source is configured to supply a reference voltage (VREF) to the node (NVR) via a third switch (N7). The fourth switch (N2) and fifth switch (N3) are configured to receive a respective first control signal (RWL) and second control signal (ZRWL) and to pass a voltage at the node (NVR) to the respective first data line (BL) and second data line (BLB).</p>
申请公布号 EP2421002(B1) 申请公布日期 2015.12.16
申请号 EP20100187772 申请日期 2010.10.15
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 KATOCH, ATUL;O'CONNELL, CORMAC MICHAEL
分类号 G11C11/4091 主分类号 G11C11/4091
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