发明名称 DYNAMIC SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To extend a page data field without increasing the consumed current consumption. SOLUTION: A memory array M is divided into a plurality of memory sub arrays Ma and Mb each having a plurality of memory cell array blocks M1-M16. Word lines of the memory cell array blocks are driven to be in an active state in accordance with sequentially activated block selection signals for the whole of the memory sub arrays. A bit count of row address signals is set smaller than a bit count of column address signals.
申请公布号 JPH11102585(A) 申请公布日期 1999.04.13
申请号 JP19980207627 申请日期 1998.07.23
申请人 RICHARD CHARLES FOSS 发明人 RICHARD CHARLES FOSS
分类号 G11C11/401;G11C11/407;G11C11/409;(IPC1-7):G11C11/401 主分类号 G11C11/401
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