Fin Fet device with independent control gate

摘要

A FinFET device with an independent control gate, including: a silicon-on-insulator substrate; a non-planar multi-gate transistor disposed on the silicon-on-insulator substrate, the transistor comprising a conducting channel wrapped around a thin silicon fin; a source/drain extension region; an independently addressable control gate that is self-aligned to the fin and does not extend beyond the source/drain extension region, the control gate comprising: a thin layer of silicon nitride; and a plurality of spacers.

主权项

1. A FinFET device with an independent control gate, said FinFET device comprising:
a substrate on which shallow trench isolation has been performed; an independent control gate disposed on a fin, and comprising: control gate material deposited on control gate oxide, wherein the fin includes an overall fin width and the control gate material includes an overall width dimension less than the overall fin width; an encapsulating dielectric layer formed in lateral recesses introduced into the control gate material, said encapsulating dielectric layer to provide passivation on sidewalls of the independent control gate; the encapsulating dielectric layer including a thin conformal film of SiN deposited over the control gate material; a gate stack formed over the encapsulating dielectric layer; a nitride spacer preventing control gate to source/drain shorts during silicide formation; and a source/drain region extending beyond the independent control gate.