Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same

摘要

An epoxy resin composition for encapsulating a semiconductor device, the epoxy resin composition including an epoxy resin, a curing agent, and one or more inorganic fillers, the one or more inorganic fillers including prismatic cristobalite, the prismatic cristobalite being present in the epoxy resin composition in an amount of about 1 to about 50% by weight, based on the total weight of the epoxy resin composition.

主权项

1. An epoxy resin composition for encapsulating a semiconductor device, the epoxy resin composition comprising:
an epoxy resin; a curing agent; and one or more inorganic fillers, the one or more inorganic fillers including prismatic cristobalite, the prismatic cristobalite being present in the epoxy resin composition in an amount of about 1 to about 50% by weight, based on the total weight of the epoxy resin composition, wherein the prismatic cristobalite is a mixture of: 1 to 20% by weight of prismatic cristobalite having an average particle diameter of 0.1 to 3 μm, wherein prismatic cristobalite having an average particle diameter of 1 μm is present in an amount of 0.13 to 2.15% by weight, based on the total weight of the epoxy resin composition, 30 to 90% by weight of prismatic cristobalite having an average particle diameter of 3 to 10 μm, wherein prismatic cristobalite having an average particle diameter of 5 μm is present in an amount of 1.93 to 32.25% by weight, based on the total weight of the epoxy resin composition, and 5 to 60% by weight of prismatic cristobalite having an average particle diameter of 10 to 20 μm, wherein prismatic cristobalite having an average particle diameter of 18 μm is present in an amount of 0.52 to 8.60% by weight, based on the total weight of the epoxy resin composition.