发明名称 Sapphire substrate flattening method
摘要 A sapphire substrate flattening method including an ingot slicing step of slicing a sapphire single-crystal ingot to obtain a sapphire substrate, an annealing step of annealing the sapphire substrate, a wafer mounting step of mounting the sapphire substrate processed by the annealing step on a stage having a holding surface in the condition where a first surface of the sapphire substrate is in contact with the holding surface of the stage through a liquid resin, a resin curing step of curing the liquid resin, a first grinding step of grinding a second surface of the sapphire substrate opposite to the first surface, a resin removing step of removing the liquid resin cured on the first surface of the sapphire substrate, and a second grinding step of grinding the first surface of the sapphire substrate.
申请公布号 US9211625(B2) 申请公布日期 2015.12.15
申请号 US201414200280 申请日期 2014.03.07
申请人 DISCO CORPORATION 发明人 Kurokawa Hiroshi
分类号 H01L21/46;B24B7/22;H01L21/02 主分类号 H01L21/46
代理机构 Greer Burns & Crain, Ltd. 代理人 Greer Burns & Crain, Ltd.
主权项 1. A sapphire substrate flattening method comprising: an ingot slicing step of slicing a sapphire single-crystal ingot to obtain a sapphire substrate; an annealing step of annealing said sapphire substrate obtained by said ingot slicing step, wherein said annealing step is performed by accommodating said sapphire substrate in an annealing chamber, heating said annealing chamber and supplying an annealing gas to said annealing chamber; a wafer mounting step of mounting said sapphire substrate processed by said annealing step on a stage having a holding surface in a condition where a first surface of said sapphire substrate is in contact with said holding surface of said stage through a liquid resin; a resin curing step of curing said liquid resin after performing said wafer mounting step; a first grinding step of grinding a second surface of said sapphire substrate opposite to said first surface after performing said resin curing step; a resin removing step of removing said liquid resin cured on said first surface of said sapphire substrate after performing said first grinding step; and a second grinding step of grinding said first surface of said sapphire substrate after performing said resin removing step.
地址 Tokyo JP