发明名称 Laser crystallization of thin films on various substrates at low temperatures
摘要 A method and system are provided for crystallizing thin films with a laser system. The method includes obtaining a thin film comprising a substrate and a target layer that contains nano-scale particles and is deposited on the substrate. The heat conduction between the target layer and the substrate of the thin film is determined based on thermal input from the laser system to identify operating parameters for the laser system that cause crystallization of the nano-scale particles of the target layer in an environment at near room temperature with the substrate remaining at a temperature below the temperature of the target layer. The laser system is then operated with the determined operating parameters to generate a laser beam that is transmitted along an optical path to impinge the target layer. The laser beam is pulsed to create a localized rapid heating and cooling of the target layer.
申请公布号 US9211611(B2) 申请公布日期 2015.12.15
申请号 US201213683898 申请日期 2012.11.21
申请人 Purdue Research Foundation 发明人 Cheng Gary J.;Zhang Martin Y.
分类号 C30B1/02;B23K26/30;H01L31/0392;H01L31/18 主分类号 C30B1/02
代理机构 Hartman Global IP Law 代理人 Hartman Global IP Law ;Hartman Gary M.;Winter Michael D.
主权项 1. A method of inducing crystallization in thin films with a laser system, the method comprising: obtaining a thin film comprising a substrate and a target layer deposited on the substrate, wherein the target layer comprises nano-scale particles; determining the heat conduction between the target layer and the substrate of the thin film based on thermal input from the laser system to identify operating parameters for the laser system that cause crystallization and crystal growth of the nano-scale particles of the target layer in an environment at near room temperature with the substrate remaining at a temperature below the temperature of the target layer; transmitting a laser beam of the laser system along an optical path to impinge the target layer of the thin film; and then pulsing the laser beam to create a localized rapid heating and cooling of the target layer, wherein the laser system is operated at the operating parameters identified in the determining step to crystallize and induce crystal growth of the nano-scale particles of the target layer and maintain the substrate at a temperature below the temperature of the target layer.
地址 West Lafayette IN US