| 摘要 |
<p>A photolithography mask (30) comprises transparent regions (32), opaque regions (33), and semitransparent regions (31). When a photosensitive resin material is exposed through this mask, resist patterns of different thicknesses are formed. The mask is produced by forming opaque film (3) on a transparent substrate (1), patterning the opaque film (3), forming semitransparent film (4), and patterning the semitransparent film (4).</p> |
