Using molecular beam epitaxy in a semiconductor structure with a high K/GaSb interface

摘要

Disclosed is a wafer comprising a first layer of GaSb grown on a GaSb substrate by molecular beam epitaxy (MBE), an oxide layer deposited on the surface of the first layer, and a cap layer deposited on the surface of the oxide layer. The wafer was capped with an arsenic (As) layer after the growth of the first layer. The As layer was removed from the wafer before the oxide layer was deposited on the surface of the first layer. Also disclosed is a method of forming a wafer. The method comprises growing a first layer of GaSb on a GaSb substrate by MBE, capping the wafer with an As layer after the growth of the first layer, removing the As layer from the wafer, depositing an oxide layer on the surface of the first layer, and depositing a cap layer on the surface of the oxide layer.

主权项

1. A method of forming a wafer for use in a semiconductor fabrication process, the method comprising:
growing a first layer of GaSb on a GaSb substrate by molecular beam epitaxy (MBE); capping the wafer with an arsenic (As) layer after the growth of the first layer of GaSb; removing the As layer from the wafer before depositing an oxide layer on the surface of the first layer of GaSb; depositing an oxide layer on the surface of the first layer of GaSb, wherein the oxide layer does not comprise SbOx or elemental Sb; and depositing a cap layer on the surface of the oxide layer to reduce the likelihood of the oxide layer absorbing moisture upon air exposure.