Nonvolatile memory element, nonvolatile memory device, and manufacturing method for the same

摘要

A nonvolatile memory element according to the present invention includes a first metal line; a plug formed on the first metal line and connected to the first metal line; a stacked structure including a first electrode, a second electrode, and a variable resistance layer, the stacked structure being formed on a plug which is connected to the first electrode; a second metal line formed on the stacked structure and directly connected to the second electrode; and a side wall protective layer which covers the side wall of the stacked structure and has an insulating property and an oxygen barrier property, wherein part of a lower surface of the second metal line is located under an upper surface of the stacked structure.

主权项

1. A nonvolatile memory element which includes a first electrode, a second electrode, and a variable resistance layer which (i) is interposed between the first electrode and the second electrode, (ii) comprises an oxygen-deficient metal oxide, and (iii) reversibly changes between a high resistance state and a low resistance state in which a resistance value is lower than a resistance value in the high resistance state, according to an electrical signal applied between the first electrode and the second electrode,
the nonvolatile memory element comprising: a first metal line; a stacked structure which is formed above the first metal line, and includes the first electrode, the second electrode, and the variable resistance layer, one of the first electrode and the second electrode being electrically connected to the first metal line; a second metal line which is formed on the stacked structure, and is directly connected, without use of a plug, to the other of the first electrode and the second electrode; and a side wall protective layer which covers a side wall of the stacked structure without covering an upper surface of the stacked structure, the side wall protective layer having an insulating property and an oxygen barrier property; wherein part of a lower surface of the second metal line is located under the upper surface of the stacked structure; and wherein the variable resistance layer comprises
a first variable resistance layer comprising the metal oxide, anda second variable resistance layer comprising the metal oxide and having an oxygen content atomic percentage higher than an oxygen content atomic percentage of the first variable resistance layer.