发明名称 Semiconductor memory device and method of operating the same
摘要 Semiconductor memory device and method of operating same includes reading data stored in memory cells of a page; performing an error correction loop (ECC loop) including performing an error checking and correcting operation (ECC) on the read data; determining a number of bit errors in the read data; and when the number of bit errors is greater than a maximum number of correctable bits, incrementing the number of ECC iterations (ECC count) and increasing the maximum number of correctable bits; storing the ECC count until the number of bit errors is less than the maximum number of correctable bits; and programming corrected data to the memory cells when the stored ECC count is more than preset number.
申请公布号 US9213592(B2) 申请公布日期 2015.12.15
申请号 US201213719212 申请日期 2012.12.18
申请人 SK HYNIX INC. 发明人 Joo Seok Jin
分类号 G06F11/10;G11C16/34;G11C29/04 主分类号 G06F11/10
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A method of performing a refresh operation of a semiconductor memory device, the method comprising: reading data stored in memory cells of a page; performing an error correction loop (ECC loop) comprising: performing an error checking and correcting operation (ECC) on the read data; determining a number of bit errors in the read data; and when the number of bit errors is greater than a maximum number of correctable bits, incrementing an ECC count and changing the maximum number of correctable bits by increasing the maximum number of correctable bits, and repeating the ECC loop by performing the error checking and correcting operation using the changed maximum number of correctable bits; storing the ECC count when the number of bit errors in the read data is less than the maximum number of correctable bits as a result of performing the ECC; and programming corrected data to the memory cells when the stored ECC count is more than a preset number.
地址 Icheon-Si, Gyeonggi-Do KR