| 发明名称 | Plasmonic IR devices | ||
| 摘要 | An infra-red (IR) device comprising a dielectric membrane formed on a silicon substrate comprising an etched portion; and at least one patterned layer formed within or on the dielectric membrane for controlling IR emission or IR absorption of the IR device, wherein the at least one patterned layer comprises laterally spaced structures. | ||
| 申请公布号 | US9214604(B2) | 申请公布日期 | 2015.12.15 |
| 申请号 | US201414300830 | 申请日期 | 2014.06.10 |
| 申请人 | Cambridge CMOS Sensors Limited | 发明人 | Ali Syed Zeeshan;Udrea Florin;Gardner Julian;Hooper Richard Henry;De Luca Andrea;Chowdhury Mohamed Foysol;Poenaru Ilie |
| 分类号 | H01L33/00;H01L33/34;H05B3/26;G01J5/12;G01J5/08;H01L27/15 | 主分类号 | H01L33/00 |
| 代理机构 | Renner, Otto, Boisselle & Sklar, LLP | 代理人 | Renner, Otto, Boisselle & Sklar, LLP |
| 主权项 | 1. An infra-red (IR) device comprising: a dielectric membrane formed on a silicon substrate, wherein the silicon substrate comprises an etched portion; and at least one patterned layer formed within or on the dielectric membrane for controlling IR emission or IR absorption of the IR device, wherein the at least one patterned layer comprises laterally spaced structures. | ||
| 地址 | Cambridge GB | ||