Field effect silicon carbide transistor

摘要

In a SiC-MOSFET power device for which a SiC substrate is used, a laminated insulating film having a charge-trapping characteristic is employed as a gate insulating film of the SiC-DiMOSFET, and charges are injected into the laminated insulating film, thereby suppressing a change in the gate threshold voltage.

主权项

1. A field effect silicon carbide transistor comprising:
a silicon carbide layer; a gate insulating film formed on a first surface of the silicon carbide layer; a gate electrode formed on the gate insulting film; a source electrode formed on the silicon carbide layer; and a drain electrode formed on a second surface that is a rear surface of the first surface of the silicon carbide layer, wherein the silicon carbide layer has a channel-implanted structure in which a first region that is identically charged to a drain region and a second region that is oppositely charged to the first region are sequentially disposed from a gate insulating film side right below the gate insulating film, the gate insulating film includes a charge storage layer, a bottom barrier film present between the silicon carbide layer and the charge storage layer, and a top barrier film present between the gate electrode and the charge storage layer, and charges are stored in the charge storage layer.