发明名称 |
Fin structure and method for forming the same |
摘要 |
According to an exemplary embodiment, a method of forming a fin structure is provided. The method includes the following operations: etching a first dielectric layer to form at least one recess and a first core portion of a fin core; form an oxide layer as a shallow trench isolation layer in the recess; etching back the oxide layer to expose a portion of the fin core; and forming a fin shell to cover a sidewall of the exposed portion of the fin core. |
申请公布号 |
US9214513(B2) |
申请公布日期 |
2015.12.15 |
申请号 |
US201414179908 |
申请日期 |
2014.02.13 |
申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Lin Chun-Hsiung;Diaz Carlos H.;Chang Hui-Cheng;Jang Syun-Ming;Huang Mao-Lin;Wang Chien-Hsun |
分类号 |
H01L27/12;H01L29/06;H01L29/78;H01L29/267;H01L21/762 |
主分类号 |
H01L27/12 |
代理机构 |
Jones Day |
代理人 |
Jones Day |
主权项 |
1. A fin structure, comprising:
a fin core protruding from a substrate, comprising:
a first core portion; anda second core portion over the first core portion; and a fin shell covering a portion of a sidewall of the fin core, wherein a material of the second core portion has a lattice constant between a material of the first core portion and a material of the fin shell. |
地址 |
Hsinchu TW |