发明名称 Fin structure and method for forming the same
摘要 According to an exemplary embodiment, a method of forming a fin structure is provided. The method includes the following operations: etching a first dielectric layer to form at least one recess and a first core portion of a fin core; form an oxide layer as a shallow trench isolation layer in the recess; etching back the oxide layer to expose a portion of the fin core; and forming a fin shell to cover a sidewall of the exposed portion of the fin core.
申请公布号 US9214513(B2) 申请公布日期 2015.12.15
申请号 US201414179908 申请日期 2014.02.13
申请人 Taiwan Semiconductor Manufacturing Company Limited 发明人 Lin Chun-Hsiung;Diaz Carlos H.;Chang Hui-Cheng;Jang Syun-Ming;Huang Mao-Lin;Wang Chien-Hsun
分类号 H01L27/12;H01L29/06;H01L29/78;H01L29/267;H01L21/762 主分类号 H01L27/12
代理机构 Jones Day 代理人 Jones Day
主权项 1. A fin structure, comprising: a fin core protruding from a substrate, comprising: a first core portion; anda second core portion over the first core portion; and a fin shell covering a portion of a sidewall of the fin core, wherein a material of the second core portion has a lattice constant between a material of the first core portion and a material of the fin shell.
地址 Hsinchu TW