发明名称 |
Array substrate and display device |
摘要 |
An array substrate and a display device includes: a base substrate; a TFT, a gate line, a data line and a pixel electrode formed on the base substrate, the TFT includes: a bottom gate, a first gate insulating layer, an active layer, a second gate insulating layer, a top gate, a gate isolation layer and a source electrode and a drain electrode sequentially formed on the base substrate; wherein, the source electrode and the drain electrode are in contact with the active layer through a first via hole and a second via hole passing through the gate isolation layer and the second insulating layer, respectively; the pixel electrode is in contact with the drain electrode. |
申请公布号 |
US9214482(B2) |
申请公布日期 |
2015.12.15 |
申请号 |
US201314089841 |
申请日期 |
2013.11.26 |
申请人 |
BOE Technology Group Co., Ltd. |
发明人 |
Shi Lei |
分类号 |
H01L29/04;H01L27/12;H01L29/49;H01L29/66;H01L29/786 |
主分类号 |
H01L29/04 |
代理机构 |
Frommer Lawrence & Haug LLP |
代理人 |
Frommer Lawrence & Haug LLP |
主权项 |
1. An array substrate, comprising:
a base substrate; and a TFT, a gate line, a data line and a pixel electrode formed on the base substrate, wherein the TFT includes: a bottom gate, a first gate insulating layer, an active layer, a second gate insulating layer, a top gate, a gate isolation layer and a source electrode and a drain electrode sequentially formed on the base substrate; wherein, the source electrode and the drain electrode are in contact with the active layer through a first via hole and a second via hole passing through the gate isolation layer and the second insulating layer, respectively; the pixel electrode is in contact with the drain electrode, and wherein the array substrate further includes a nickel layer, and the nickel layer is disposed between the source electrode and the active layer and/or between the drain electrode and the active layer. |
地址 |
Beijing CN |