| 发明名称 | Three-dimensional nonvolatile memory and method of fabrication | ||
| 摘要 | A three-dimensional memory is provided that includes a first memory level and a second memory level monolithically formed above the first memory level. The first memory level includes a first steering element coupled in series with and vertically stacked above or below a first non-volatile state change element. The second memory level includes a second steering element coupled in series with and vertically stacked above or below a second non-volatile state change element. Other aspects are also provided. | ||
| 申请公布号 | US9214243(B2) | 申请公布日期 | 2015.12.15 |
| 申请号 | US201414270409 | 申请日期 | 2014.05.06 |
| 申请人 | SanDisk 3D LLC | 发明人 | Johnson Mark G.;Lee Thomas H.;Subramanian Vivek;Farmwald Paul Michael;Cleeves James M. |
| 分类号 | G11C11/36;G11C17/06;G11C11/56;G11C13/00;G11C17/14;G11C17/16;H01L27/10;H01L27/102;H01L45/00;H01L27/24 | 主分类号 | G11C11/36 |
| 代理机构 | Vierra Magen Marcus LLP | 代理人 | Vierra Magen Marcus LLP |
| 主权项 | 1. A three-dimensional memory comprising: a first memory level comprising a first pillar-shaped memory cell comprising a first steering element coupled in series with and vertically stacked above or below a first non-volatile re-writable state change element; and a second memory level monolithically formed above the first memory level, the second memory level comprising a second pillar-shaped memory cell comprising a second steering element coupled in series with and vertically stacked above or below a second non-volatile re-writable state change element. | ||
| 地址 | Milpitas CA US | ||