发明名称 DDR 2D Vref training
摘要 A method is provided for performing memory operations in response to instructions to perform a double data rate (DDR) memory reference voltage training in the voltage domain by a processing device and determining a DDR memory reference voltage and a DDR memory delay time based upon the memory operation. Computer readable storage media are also provided. A circuit is provided that includes a communication interface portion coupled to a memory and to a processing device. The circuit also includes a circuit portion, coupled to the communication interface portion that has a hardware state machine or an algorithm. The state machine or algorithm provides instructions to the processing device to perform a double data rate (DDR) reference voltage training in the voltage domain.
申请公布号 US9214199(B2) 申请公布日期 2015.12.15
申请号 US201414497977 申请日期 2014.09.26
申请人 Advanced Micro Devices, Inc. 发明人 Brandl Kevin M.;Housty Oswin E.;Talbot Gerald
分类号 G06F12/00;G11C7/00;G11C29/02;G06F3/06;G06F13/16;G06F12/16;G11C11/40 主分类号 G06F12/00
代理机构 代理人
主权项 1. A method, comprising: performing at least one memory operation following at least one enable operation indicative of performing a double data rate (DDR) memory reference voltage training in a voltage domain by a memory controller; and determining a DDR memory reference voltage based at least upon the performed at least one memory operation.
地址 Sunnyvale CA US