发明名称 |
DDR 2D Vref training |
摘要 |
A method is provided for performing memory operations in response to instructions to perform a double data rate (DDR) memory reference voltage training in the voltage domain by a processing device and determining a DDR memory reference voltage and a DDR memory delay time based upon the memory operation. Computer readable storage media are also provided. A circuit is provided that includes a communication interface portion coupled to a memory and to a processing device. The circuit also includes a circuit portion, coupled to the communication interface portion that has a hardware state machine or an algorithm. The state machine or algorithm provides instructions to the processing device to perform a double data rate (DDR) reference voltage training in the voltage domain. |
申请公布号 |
US9214199(B2) |
申请公布日期 |
2015.12.15 |
申请号 |
US201414497977 |
申请日期 |
2014.09.26 |
申请人 |
Advanced Micro Devices, Inc. |
发明人 |
Brandl Kevin M.;Housty Oswin E.;Talbot Gerald |
分类号 |
G06F12/00;G11C7/00;G11C29/02;G06F3/06;G06F13/16;G06F12/16;G11C11/40 |
主分类号 |
G06F12/00 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method, comprising:
performing at least one memory operation following at least one enable operation indicative of performing a double data rate (DDR) memory reference voltage training in a voltage domain by a memory controller; and determining a DDR memory reference voltage based at least upon the performed at least one memory operation. |
地址 |
Sunnyvale CA US |