Semiconductor device and method of fabricating the same

摘要

A semiconductor device includes a substrate, a conductive pattern, a side spacer, and an air gap. The substrate includes an interlayer insulating layer and a trench penetrating the interlayer insulating layer. The conductive pattern is disposed within the trench of the substrate. The side spacer is disposed within the trench. The side spacer covers an upper side surface of the conductive pattern. The air gap is disposed within the trench. The air gap is bounded by a sidewall of the trench, the side spacer, and a lower side surface of the conductive pattern. A level of a bottom surface of the conductive pattern is lower than a level of bottom surfaces of the side spacer.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a lower conductive pattern disposed on the semiconductor substrate; an interlayer insulating layer disposed on the semiconductor substrate, the interlayer insulating layer including an upper penetrating hole partially exposing a top surface of the lower conductive pattern; an upper conductive pattern disposed within the upper penetrating hole and disposed on the top surface of the lower conductive pattern, the upper conductive pattern electrically connected to the lower conductive pattern; a side spacer disposed within the upper penetrating hole, the side spacer covering an upper side surface of the upper conductive pattern; and an air gap disposed within the upper penetrating hole, wherein a boundary of the air gap is bounded by a sidewall of the upper penetrating hole, the side spacer, part of the top surface of the lower conductive pattern, and a lower side surface of the upper conductive pattern, and wherein the side spacer is spaced apart from the lower conductive pattern by the air gap.