| 发明名称 |
Systems and methods for laser splitting and device layer transfer |
| 摘要 |
Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation. |
| 申请公布号 |
US9214353(B2) |
申请公布日期 |
2015.12.15 |
| 申请号 |
US201313778047 |
申请日期 |
2013.02.26 |
| 申请人 |
Solexel, Inc. |
发明人 |
Yonehara Takao;Rana Virenda V.;Seutter Sean;Moslehi Mehrdad M.;Tamilmani Subramanian |
| 分类号 |
H01L21/762;H01L21/304;H01L21/268;H01L31/18;B23K26/00;B23K26/06;B23K26/08;B23K26/30;H01L33/00;H01L25/065 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
Wood John |
| 主权项 |
1. A method for splitting and separating a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, microelectro-mechanical system (MEMS), or optoelectronic devices from a donor wafer; comprising:
using laser irradiation on the same side which contains said devices, said laser irradiation using a focused laser beam scanned across said donor wafer and forming a two-dimensional separation layer of micro-crack spots; and using a liquid nitrogen spray to facilitate releasing said crystalline semiconductor material along said separation layer. |
| 地址 |
Milpitas CA US |
