| 摘要 |
A method for producing a compound semiconductor crystal, includes; a sacrificial layer formation step of forming a sacrificial layer containing Cx1Siy1Gez1Sn1-x1-y1-z1 (0≦x1<1, 0≦y1≦1, 0≦z1≦1, and 0<x1+y1+z1≦1), on a base wafer whose surface is made of a silicon crystal; a crystal formation step of forming, on the sacrificial layer, a compound semiconductor crystal lattice-matching or pseudo lattice-matching the sacrificial layer; and a crystal removal step of removing the compound semiconductor crystal from the base wafer, by etching the sacrificial layer. |
| 主权项 |
1. A method for producing a compound semiconductor crystal, comprising:
an inhibition layer formation step of forming an inhibition layer on a base wafer whose surface is made of a silicon crystal; an aperture formation step of etching the inhibition layer and forming, in the inhibition layer, an aperture in which a part of the base wafer is exposed; a sacrificial layer formation step of crystal growing a sacrificial layer containing Cx1Siy1Gez1Sn1-x1-y1-z1 (0≦x1<1, 0≦y1≦1, 0≦z1≦1, and 0<x1+y1+z1≦1), only on the part of the base wafer exposed by the aperture; a crystal formation step of forming, only on the sacrificial layer, a compound semiconductor crystal lattice-matching or pseudo lattice-matching the sacrificial layer, such that a part of the sacrificial layer is kept in an exposed state; and a crystal removal step of removing the compound semiconductor crystal from the base wafer, by etching the sacrificial layer, wherein the inhibition layer inhibits growth of the sacrificial layer and the compound semiconductor crystal at a portion other than the part of the base wafer exposed by the aperture, the inhibition layer has a thickness of 2 nm to 500 nm, and the compound semiconductor crystal is a Group III-V compound semiconductor crystal that includes at least one of Al, Ga, In as a Group III element, and at least one of N, P, As, Sb as a Group V element. |
