| 摘要 |
The present invention relates to a method for manufacturing a light absorption layer for a CIGS solar cell. According to the method of the present invention, the light absorption layer is formed by the steps of: (a) depositing precursors including at least one from copper, indium, and gallium on a substrate; (b) depositing selenium on one surface of the inside of a reaction container; (c) arranging the substrate in the reaction container to make a selenium deposition surface in the reaction container and a precursor deposition surface on the substrate face each other while being separated from each other at a certain distance and then sealing the reaction container; (d) inserting the sealed reaction container in a reaction chamber of rapid thermal treatment equipment; and (e) performing selenization on the precursors on the substrate by thermally treating the reaction container. |
