Semiconductor light emitting device including GaAs substrate

摘要

A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 μm.

主权项

1. A semiconductor light emitting device, comprising:
a substrate made of GaAs; and a semiconductor layer formed on the substrate, wherein the semiconductor light emitting device has a thickness of not more than 60 μm, further wherein the semiconductor layer contains a first reflecting layer disposed on the substrate, a second reflecting layer disposed on the first reflecting layer, and an n-type clad layer disposed on the second reflecting layer, wherein the substrate is etched so that a thickness of the substrate in a stacking direction of the semiconductor light emitting device is reduced down to about 1 μm.