| 发明名称 | Self-aligned dual-metal silicide and germanide formation | ||
| 摘要 | A method includes growing an epitaxy semiconductor region at a major surface of a wafer. The epitaxy semiconductor region has an upward facing facet facing upwardly and a downward facing facet facing downwardly. The method further includes forming a first metal silicide layer contacting the upward facing facet, and forming a second metal silicide layer contacting the downward facing facet. The first metal silicide layer and the second metal silicide layer comprise different metals. | ||
| 申请公布号 | US9214556(B2) | 申请公布日期 | 2015.12.15 |
| 申请号 | US201313963887 | 申请日期 | 2013.08.09 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Wann Clement Hsingjen;Sun Sey-Ping;Yeh Ling-Yen;Shih Chi-Yuan;Yu Li-Chi;Tsai Chun Hsiung;Lin Chin-Hsiang;Chen Neng-Kuo;Chang Meng-Chun;Ma Ta-Chun;Huang Gin-Chen;Huang Yen-Chun |
| 分类号 | H01L21/336;H01L29/78;H01L29/66 | 主分类号 | H01L21/336 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method comprising: growing an epitaxy semiconductor region at a major surface of a wafer, wherein the epitaxy semiconductor region comprises an upward facing facet facing upwardly and a downward facing facet facing downwardly; forming a first metal silicide layer contacting the upward facing facet; and forming a second metal silicide layer contacting the downward facing facet, wherein the first metal silicide layer and the second metal silicide layer comprise different metals. | ||
| 地址 | Hsin-Chu TW | ||