Semiconductor device with integrated electrostatic discharge (ESD) clamp

摘要

A device includes a substrate, a body region in the substrate and having a first conductivity type, source and drain regions in the substrate, having a second conductivity type, and spaced from one another to define a conduction path that passes through the body region, a doped isolating region in the substrate, having the second conductivity type, and configured to surround a device area in which the conduction path is disposed, an isolation contact region in the substrate, having the second conductivity type, and electrically coupled to the doped isolating region to define a collector region of a bipolar transistor, and first and second contact regions within the body region, having the first and second conductivity types, respectively, and configured to define a base contact region and an emitter region of the bipolar transistor, respectively.

主权项

1. A semiconductor device comprising:
a substrate; a body region in the substrate and having a first conductivity type; source and drain regions in the substrate, having a second conductivity type, and spaced from one another to define a conduction path that passes through the body region; a doped isolating region in the substrate, having the second conductivity type, and configured to surround a device area in which the conduction path is disposed; an isolation contact region in the substrate, having the second conductivity type, and electrically coupled to the doped isolating region to define a collector region of a bipolar transistor; and first and second contact regions within the body region, having the first and second conductivity types, respectively, and configured to define a base contact region and an emitter region of the bipolar transistor, respectively; wherein the doped isolating region and the body region are spaced from one another to establish a first breakdown trigger voltage level of the bipolar transistor lower than a second breakdown voltage level of the semiconductor device along the conduction path.