发明名称 DEVICE AND DEVICE MANUFACTURE METHOD
摘要 <p>A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.</p>
申请公布号 CA2704610(C) 申请公布日期 2015.12.15
申请号 CA20082704610 申请日期 2008.10.14
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;MITSUBISHI HEAVY INDUSTRIES, LTD. 发明人 UTSUMI, JUN;GOTO, TAKAYUKI;IDE, KENSUKE;TAKAGI, HIDEKI;FUNAYAMA, MASAHIRO
分类号 H01L21/02;B23K20/00;H01L23/02;H01L27/14;H01L31/02 主分类号 H01L21/02
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