发明名称 Body-biased switching device
摘要 Embodiments provide a switching device including one or more field-effect transistors (FETs). In embodiments, a body-bias circuit may derive a bias voltage based on a radio frequency signal applied to a switch field-effect transistor and apply the bias voltage to the body terminal of the switch field-effect transistor.
申请公布号 US9214932(B2) 申请公布日期 2015.12.15
申请号 US201313764655 申请日期 2013.02.11
申请人 TriQuint Semiconductor, Inc. 发明人 Clausen William J.;Furino, Jr. James P.;Yore Michael D.
分类号 H01L29/00;H03K17/06;H03K17/16;H01L29/78 主分类号 H01L29/00
代理机构 Withrow & Terranova, P.L.L.C. 代理人 Withrow & Terranova, P.L.L.C.
主权项 1. A circuit configured to switch radio-frequency (“RF”) signals, the circuit comprising: a field-effect transistor (“FET”) including a source terminal, a gate terminal, a drain terminal, and a body terminal; and a body-bias circuit coupled with the source terminal, the drain terminal and the body terminal, the body-bias circuit having a first circuit element coupled between the source terminal and the body terminal and a second circuit element coupled between the drain terminal and the body terminal, the first and second circuit elements to: derive a negative bias voltage based on an RF signal through the first and second circuit elements; andprovide the negative bias voltage to the body terminal when the FET is in an off state.
地址 Hillsboro OR US