发明名称 |
Body-biased switching device |
摘要 |
Embodiments provide a switching device including one or more field-effect transistors (FETs). In embodiments, a body-bias circuit may derive a bias voltage based on a radio frequency signal applied to a switch field-effect transistor and apply the bias voltage to the body terminal of the switch field-effect transistor. |
申请公布号 |
US9214932(B2) |
申请公布日期 |
2015.12.15 |
申请号 |
US201313764655 |
申请日期 |
2013.02.11 |
申请人 |
TriQuint Semiconductor, Inc. |
发明人 |
Clausen William J.;Furino, Jr. James P.;Yore Michael D. |
分类号 |
H01L29/00;H03K17/06;H03K17/16;H01L29/78 |
主分类号 |
H01L29/00 |
代理机构 |
Withrow & Terranova, P.L.L.C. |
代理人 |
Withrow & Terranova, P.L.L.C. |
主权项 |
1. A circuit configured to switch radio-frequency (“RF”) signals, the circuit comprising:
a field-effect transistor (“FET”) including a source terminal, a gate terminal, a drain terminal, and a body terminal; and a body-bias circuit coupled with the source terminal, the drain terminal and the body terminal, the body-bias circuit having a first circuit element coupled between the source terminal and the body terminal and a second circuit element coupled between the drain terminal and the body terminal, the first and second circuit elements to:
derive a negative bias voltage based on an RF signal through the first and second circuit elements; andprovide the negative bias voltage to the body terminal when the FET is in an off state. |
地址 |
Hillsboro OR US |