发明名称 |
Method of manufacturing light-emitting diode package |
摘要 |
A method of manufacturing a light-emitting diode package is illustrated. A light-emitting diode chip is manufactured. A material layer is formed on side surfaces and a rear surface of the light-emitting diode chip. The material layer is then oxidized to convert the material layer into an oxidized layer to form a reflective layer on the side surfaces and the rear surface of the light-emitting diode chip. The light-emitting diode chip is packaged. |
申请公布号 |
US9214606(B2) |
申请公布日期 |
2015.12.15 |
申请号 |
US201414203191 |
申请日期 |
2014.03.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Park Il-woo;Sohn Jong-rak |
分类号 |
H01L21/00;H01L33/46;H01L33/60;H01L33/38;H01L23/00;H01L33/50;H01L33/48 |
主分类号 |
H01L21/00 |
代理机构 |
McDermott Will & Emery LLP |
代理人 |
McDermott Will & Emery LLP |
主权项 |
1. A method of manufacturing a light-emitting diode package, the method comprising:
dicing a wafer to obtain a light-emitting diode chip including side surfaces, a light-emitting surface, and a rear surface opposed to the light-emitting surface of the light-emitting diode chip; mounting the light-emitting diode chip on a carrier substrate, such that the light-emitting surface of the light-emitting diode chip is facing toward the carrier substrate; after mounting the light-emitting diode chip on the carrier substrate, forming a material layer on the side surfaces and the rear surface of the light-emitting diode chip; oxidizing the material layer to convert the material layer into an oxidized layer to form a reflective layer on the side surfaces and the rear surface of the light-emitting diode chip; and packaging the light-emitting diode chip. |
地址 |
Suwon-Si, Gyeonggi-Do KR |