发明名称 |
Graphene-transferring member, graphene transferrer, method of transferring graphene, and methods of fabricating graphene device by using the same |
摘要 |
Graphene transferring members, graphene transferrer, methods of transferring graphene, and methods of fabricating a graphene device, may include a metal thin-film layer pattern and a graphene layer sequentially stacked on an adhesive member. The metal thin-film layer and the graphene layer may have the same shape. After transferring the graphene layer onto a transfer-target substrate during the fabrication of a graphene device, the metal thin-film layer is patterned to form electrodes on respective ends of the graphene layer by removing a portion of the metal thin-film layer. |
申请公布号 |
US9214559(B2) |
申请公布日期 |
2015.12.15 |
申请号 |
US201213659131 |
申请日期 |
2012.10.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Lee Joo-ho;Lee Chang-seung;Kim Yong-sung;Song Hyun-jae |
分类号 |
B29C65/52;B29C65/54;B32B37/26;B32B38/10;H01L29/786;H01L29/423;H01L29/66;H01L29/778;H01L29/16 |
主分类号 |
B29C65/52 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A method of transferring graphene, the method comprising:
sequentially forming a sacrificial layer and a catalyst layer on a substrate; growing a graphene layer on the catalyst layer; forming a metal thin-film layer on the graphene layer; patterning the metal thin-film layer, the graphene layer, and the catalyst layer to form the metal thin-film layer pattern, a graphene layer pattern and a catalyst layer pattern; forming an adhesive layer on the metal thin-film layer; sequentially removing the sacrificial layer and the catalyst layer pattern; and transferring the graphene layer pattern from the adhesive layer onto a transfer-target substrate so that the graphene layer pattern contacts the transfer-target substrate. |
地址 |
Gyeonggi-Do KR |