发明名称 Substrate processing method and substrate processing apparatus
摘要 According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.
申请公布号 US9213242(B2) 申请公布日期 2015.12.15
申请号 US201213541167 申请日期 2012.07.03
申请人 Kabushiki Kaisha Toshiba 发明人 Uozumi Yoshihiro;Kimura Shinsuke;Ogawa Yoshihiro;Iimori Hiroyasu;Koide Tatsuhiko;Hirabayashi Hideaki;Nagashima Yuji
分类号 B08B3/00;G03F7/40;H01L21/67;G03F7/16 主分类号 B08B3/00
代理机构 Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. 代理人 Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
主权项 1. A substrate processing method, comprising: treating a substrate with a first liquid, the substrate having a structural body formed on at least a major surface of the substrate; forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid; and removing the support member by a sublimation of the support member from a solid phase directly to a gaseous phase by a simultaneous pressure reduction and heating process on the support member, wherein the heating process uses only a hot plate, wherein the support member includes a substance including at least one selected from the group consisting of a methacrylic resin material; a styrene resin material; a perfluoro group, iodine, naphthalene, and benzotriazole.
地址 Tokyo JP