发明名称 Aqueous ophthalmic suspension of crystalline rebamipide
摘要 The invention provides an ophthalmic product containing rebamipide, which has a transparency enough to be agreeable feeling on using it and has neutral to weakly acidic pH not to injury of the keratoconjunctiva of a patient suffering from dry eye. An aqueous suspension of crystalline rebamipide which has an improved transparency is provided by adding an aqueous solution of rebamipide dissolved by a base such as sodium hydroxide or an aqueous solution of a salt of rebamipide to an aqueous acidic solution such as hydrochloric acid containing at least one of the compounds selected from water-soluble polymers and surfactants, and mixing them.
申请公布号 US9211254(B2) 申请公布日期 2015.12.15
申请号 US200511667313 申请日期 2005.11.11
申请人 OTSUKA PHARMACEUTICAL CO., LTD. 发明人 Matsuda Takakuni;Hiraoka Shogo;Tomohira Yuso;Ishikawa Shinichi
分类号 A61K31/47;A61K9/00;A61K9/10;A61K31/4704;A61K47/10;A61K47/26;A61K47/32;A61K47/38 主分类号 A61K31/47
代理机构 Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. 代理人 Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
主权项 1. An aqueous suspension of crystalline rebamipide comprising (1) a water-soluable salt of rebamipide; (2) hydroxypropylmethyl cellulose (HPMC) or polyvinylpyrrolidone (PVP); (3) hydrochloric acid; and (4) water; wherein said suspension is prepared by: (a) mixing an aqueous solution comprising a polymer selected from HPMC or PVP with hydrochloric acid and purified water to form a hydrochloric acid-HPMC/PVP solution; (b) dissolving rebamipide in an aqueous solution comprising NaOH to from a sodium hydroxide-rebamipide solution; (c) adding the sodium hydroxide-rebamipide solution of step (b) to the hydrochloric acid-HPMC/PVP solution step (a) to deposit crystalline rebamipide; (d) stirring the suspension of step (c) to complete the crystallization; and (e) adjusting the pH of the aqueous suspension of step (d) to 5-7 with sodium hydroxide; wherein the shape of crystalline rebamipide is a regular crystal having a long gage length of less than 1000 nm and a short gage length of less than 60 nm, provided that the ration between the long gage length and short gage length is not less than 4.
地址 Tokyo JP