| 摘要 |
The present invention relates to a composition for silicon-containing film formation, which exhibits superior storage stability, inhibits pattern collapse and footing of a resist in multilayer resist processes, in particular, in the case of development with an organic solvent, and has excellent solvent resistance before curing. The composition for silicon-containing film formation includes a polysiloxane compound and a solvent. The polysiloxane compound includes a structure represented by formula (Q2), a structure represented by formula (Q3) and a structure represented by formula (Q4). A value of q calculated according to formula (I) is no greater than 0.25, wherein q1 to q4 represent integrated intensities of 29Si-NMR signals due to silicon atoms in the structures represented by the formulae (Q1) to (Q4), respectively. A weight-average molecular weight of the polysiloxane compound is no greater than 4,000. Formula (I): q=(q1+q2)/(q1+q2+q3+q4). |
