Thin body switch transistor

摘要

An integrated recessed thin body field effect transistor (FET) and methods of manufacture are disclosed. The method includes recessing a portion of a semiconductor material. The method further includes forming at least one gate structure within the recessed portion of the semiconductor material.

主权项

1. A method, comprising:
etching portions of an insulator material formed on semiconductor material to expose a surface of the semiconductor material; recessing a portion of the semiconductor material via an oxidation process which forms an oxide region and a subsequent etching process to remove the oxide region thereby exposing the recessed portion of the semiconductor material, wherein the semiconductor material is silicon on insulator (SOI) material and the oxidation process forms the oxide region within the SOI material; forming at least one gate structure within the recessed portion of the semiconductor material; and forming channel regions for the at least one gate structure on both a recessed SOI region and a thicker SOI region, wherein the recessed SOI region is surrounded by the thicker SOI region which is protected during the oxidation process and the removing of the oxide region.