| 发明名称 | Semiconductor device manufacturing method and electronic device manufacturing method | ||
| 摘要 | A method of manufacturing a semiconductor device, includes: placing a semiconductor element on an adhesive layer that is placed on a support body having a first through hole; placing a part in an area that includes a portion corresponding to the first through-hole, the portion being on the adhesive layer placed on the support body; forming a substrate on the adhesive layer by forming a resin layer on the adhesive layer, on which the semiconductor element and the part have been placed, the substrate including the semiconductor element, the part, and the resin layer; and detaching the substrate from the adhesive layer by pressing the part through the first through-hole. | ||
| 申请公布号 | US9214361(B2) | 申请公布日期 | 2015.12.15 |
| 申请号 | US201313749126 | 申请日期 | 2013.01.24 |
| 申请人 | FUJITSU LIMITED | 发明人 | Ishizuki Yoshikatsu;Sasaki Shinya;Tani Motoaki |
| 分类号 | H01L21/00;H01L21/56;H01L23/00;H01L21/683;H01L23/31 | 主分类号 | H01L21/00 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A method of manufacturing a semiconductor device, the method comprising: placing a first semiconductor element on an adhesive layer that is placed on a support body having a first through hole; placing a first part in an area that includes a portion corresponding to the first through-hole, the portion being on the adhesive layer placed on the support body; forming a first resin layer on the adhesive layer, on which the first semiconductor element and the first part have been placed, to form, on the adhesive layer, a first substrate that includes the first semiconductor element, the first part, and the first resin layer; detaching the first substrate from the adhesive layer by pressing the first part through the first through-hole; placing a second semiconductor element on the adhesive layer, from which the first substrate has been detached; placing a second part in the area on the adhesive layer, from which the first substrate has been detached; forming a second resin layer on the adhesive layer, on which the second semiconductor element and the second part have been placed, to form, on the adhesive layer, a second substrate that includes the second semiconductor element, the second part, and the second resin layer; and detaching the second substrate from the adhesive layer by pressing the second part through the first through-hole. | ||
| 地址 | Kawasaki JP | ||