| 发明名称 |
Resistive random access memory cell structure with reduced programming voltage |
| 摘要 |
A cell of a resistive random access memory including (i) a resistive element and (ii) a switch. The resistive element includes (i) a first electrode, and (ii) a second electrode. The switch includes (i) a first terminal connected to a first contact, and (i) a second terminal connected to a second contact. The second contact is connected to the second electrode of the resistive element via a third contact. The third contact has a shape including a first surface and a second surface that is opposite to the first surface. The shape of the third contact tapers inward from the first surface towards the second surface. |
| 申请公布号 |
US9214230(B2) |
申请公布日期 |
2015.12.15 |
| 申请号 |
US201514594940 |
申请日期 |
2015.01.12 |
| 申请人 |
Marvell World Trade LTD. |
发明人 |
Sutardja Pantas;Wu Albert;Lee Winston;Lee Peter;Chang Runzi |
| 分类号 |
G11C13/00;H01L45/00;H01L27/24 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A cell of a resistive random access memory, the cell comprising:
a resistive element including (i) a first electrode, and (ii) a second electrode; and a switch including (i) a first terminal connected to a first contact, and (i) a second terminal connected to a second contact, wherein the second contact is connected to the second electrode of the resistive element via a third contact, wherein the third contact has a shape including a first surface and a second surface that is opposite to the first surface, and wherein the shape of the third contact tapers inward from the first surface towards the second surface. |
| 地址 |
St. Michael BB |
