High voltage integrated devices, methods of fabricating the same, electronic devices including the same, and electronic systems including the same

摘要

A high voltage integrated device includes a drift region in a substrate, a source region in the substrate and spaced apart from the drift region, a drain region in the drift region, a trench insulation layer in the drift region between the source region and the drain region, and a gate insulation layer and a gate electrode sequentially stacked on the substrate between the source region and the drift region and extending onto the trench insulation layers. The upper sidewall of the first trench insulation layer has a first angle to the bottom surface thereof and the lower sidewall of the first trench insulation layer has a second angle, which is smaller than the first angle, to the bottom surface thereof.

主权项

1. A high voltage integrated device comprising:
a first channel region in an upper region of a substrate; a first drift region in the upper region of the substrate and adjacent to a side of the first channel region; a first source region in the upper region of the substrate, in contact with the other side of the first channel region, and opposite to the first drift region; a first drain region in an upper region of the first drift region; a first trench insulation layer in the upper region of the first drift region between the first channel region and the first drain region; and a first gate insulation layer and a first gate electrode sequentially stacked on the first channel region and extending onto the first trench insulation layer, wherein the upper sidewall of the first trench insulation layer has a first angle to the bottom surface thereof and the lower sidewall of the first trench insulation layer has a second angle, which is smaller than the first angle, to the bottom surface thereof.