| 摘要 |
The present invention is to provide a method for forming a stacked wafer, which can form a flatter stacked wafer. The method for forming a stacked wafer includes: a bonded wafer forming step of forming a bonded wafer by bonding a surface of a second wafer to a surface of a first wafer having uniform thickness; a first wafer maintaining step of maintaining the first wafer of the bonded wafer with a chuck table, after performing the bonded wafer forming step; a second wafer polishing step of thinning the second wafer of the bonded wafer to a fixed thickness by polishing the second wafer of the bonded wafer maintained on the chuck table, and then planarizing the thinned second wafer after performing the first wafer maintaining step; the second wafer maintaining step of maintaining the second wafer of the bonded wafer, after performing the second wafer polishing step; and a first wafer polishing step of thinning the first wafer to a fixed thickness by polishing the first wafer of the bonded wafer maintained on the chuck table, and then planarizing the thinned first wafer after performing the second wafer maintaining step. |
