发明名称 Vacuum storage method and device for crystalline material
摘要 The present invention provides a method for storing a raw material inside a mold or a crucible, comprising the steps of: closing an opening of the mold filled with the raw material of a sintered metal or an opening of the crucible filled with the raw material for encouraging growth of a crystal for a semiconductor of a gallium arsenide crystal and a silicon single crystal or a polycrystalline silicon by a cap provided with a supply pipe and a vacuum evacuation pipe; vacuuming the inside the mold or crucible to a high vacuum state of 10−4 torr or less via the vacuum evacuation pipe; drying by heating the raw material in the mold or crucible filled with a heated inert gas in the range of 50 C. to 200 C. via the supply pipe; and storing the raw material in the mold or the crucible covered with the cap.
申请公布号 US9212850(B2) 申请公布日期 2015.12.15
申请号 US201114240844 申请日期 2011.08.25
申请人 MITSUBISHI MATERIALS TECHNO CORPORATION 发明人 Horioka Yukichi;Kajiwara Jiro;Sanada Hirotsugu
分类号 F26B13/10;F26B3/18;C30B11/00;C30B15/00;C30B15/10;C30B29/06;C30B29/42;B22F3/00 主分类号 F26B13/10
代理机构 Pearne & Gordon LLP 代理人 Pearne & Gordon LLP
主权项 1. A method for storing a raw material inside a mold or a crucible, comprising the steps of: closing an opening of the mold filled with the raw material of a sintered metal or an opening of the crucible filled with the raw material for growth of a crystal for a semiconductor of a gallium arsenide crystal and a silicon single crystal or a polycrystalline silicon by a cap provided with a supply pipe and a vacuum evacuation pipe; vacuuming the inside of the mold or crucible to a high vacuum state of 10−4 torr or less via the vacuum evacuation pipe; drying by heating the raw material in the mold or crucible filled with a heated inert gas in the range of 50 C. to 200 C. via the supply pipe; and storing the raw material in the mold or the crucible covered with the cap.
地址 Tokyo JP