发明名称 |
Vacuum storage method and device for crystalline material |
摘要 |
The present invention provides a method for storing a raw material inside a mold or a crucible, comprising the steps of: closing an opening of the mold filled with the raw material of a sintered metal or an opening of the crucible filled with the raw material for encouraging growth of a crystal for a semiconductor of a gallium arsenide crystal and a silicon single crystal or a polycrystalline silicon by a cap provided with a supply pipe and a vacuum evacuation pipe; vacuuming the inside the mold or crucible to a high vacuum state of 10−4 torr or less via the vacuum evacuation pipe; drying by heating the raw material in the mold or crucible filled with a heated inert gas in the range of 50 C. to 200 C. via the supply pipe; and storing the raw material in the mold or the crucible covered with the cap. |
申请公布号 |
US9212850(B2) |
申请公布日期 |
2015.12.15 |
申请号 |
US201114240844 |
申请日期 |
2011.08.25 |
申请人 |
MITSUBISHI MATERIALS TECHNO CORPORATION |
发明人 |
Horioka Yukichi;Kajiwara Jiro;Sanada Hirotsugu |
分类号 |
F26B13/10;F26B3/18;C30B11/00;C30B15/00;C30B15/10;C30B29/06;C30B29/42;B22F3/00 |
主分类号 |
F26B13/10 |
代理机构 |
Pearne & Gordon LLP |
代理人 |
Pearne & Gordon LLP |
主权项 |
1. A method for storing a raw material inside a mold or a crucible, comprising the steps of:
closing an opening of the mold filled with the raw material of a sintered metal or an opening of the crucible filled with the raw material for growth of a crystal for a semiconductor of a gallium arsenide crystal and a silicon single crystal or a polycrystalline silicon by a cap provided with a supply pipe and a vacuum evacuation pipe; vacuuming the inside of the mold or crucible to a high vacuum state of 10−4 torr or less via the vacuum evacuation pipe; drying by heating the raw material in the mold or crucible filled with a heated inert gas in the range of 50 C. to 200 C. via the supply pipe; and storing the raw material in the mold or the crucible covered with the cap. |
地址 |
Tokyo JP |