Multispectral sensor

摘要

The present invention relates to a color and non-visible light e.g. IR sensor, namely a multispectral sensor which can be used in a camera such as a TOF camera for depth measurement, reflectance measurement and color measurement, and for generation of 3D image data or 3D images as well as the camera itself and methods of operating the same.

主权项

1. A color or multispectral image sensor device, the image sensor device comprising a pixel sensor associated with a single pixel of an image, wherein the pixel sensor comprises:
a substrate in which charge carriers are generatable in response to light incident on the substrate, first (301, 616) and second (302) contact elements formed in the substrate for electrically contacting the pixel sensor,characterized in that the first and second contact elements are arranged adjacent to one another, and further comprising:
a first detection element (303, 304, 314, 315, 404,504, 604) formed in the substrate and configured for detecting generated charge carriers in a first detection region, a means for controlling the detectivity of the first detection region (301) a second detection element (303, 304, 316,401,500,600) formed in the substrate and configured for detecting generated charge carriers in a second detection region, a first filter element (311, 409, 509, 609) configured for letting pass light of a first wavelength range, wherein the first filter element overlaps a portion of the substrate comprising the first and second contact elements and also comprising the area sensitive to light between the first and second contact elements a second filter element (309, 310, 408, 508, 608) configured for letting pass light of a second wavelength range, wherein the second filter element overlaps a portion of the substrate covering the second detection element and does not overlap the first filter element, wherein the second wavelength range is different from the first wavelength range, wherein the first and second detection elements (303, 304, 316, 314, 315, 401, 404, 504, 600, 604) are laterally placed alongside the first and second contact elements (301, 302, 616), such that the first and second contact elements (301, 302, 616) can control the detectivity of the first and second detection elements (303, 304, 316, 314, 315, 401, 404, 504, 600, 604), and are not placed in between the contact elements; wherein the pixel sensor comprises a semiconductor based structure, wherein the substrate, the first and second contact elements comprise semiconductor regions of a first conductivity type, wherein the first detection element and the second detection element comprise a semiconductor region of a second conductivity type.