发明名称 Nonvolatile memory device and method of operating the same
摘要 A nonvolatile memory device includes a nonvolatile memory, a buffer memory configured to store a plurality of read data transmitted from the nonvolatile memory, an error detection and correction circuit configured to detect an error in partial data of each of the plurality of read data and judging whether the partial data is correctable or not on the basis of the detected error, and a controller configured to analyze the uncorrectable partial data with respect to the plurality of read data to determine a representative value, and to transmit the representative value to the error detection and correction circuit. The plurality of read data is read through a read operation with respect to a same page.
申请公布号 US9213598(B2) 申请公布日期 2015.12.15
申请号 US201414175342 申请日期 2014.02.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Seo Youngil;Yun Jungho;Lee Wonchul;Jung Dawoon
分类号 G11C29/00;G06F11/10 主分类号 G11C29/00
代理机构 F. Chau & Associates, LLC 代理人 F. Chau & Associates, LLC
主权项 1. A nonvolatile memory device, comprising: a nonvolatile memory; a buffer memory configured to store a plurality of read data transmitted from the nonvolatile memory; an error detection and correction circuit configured to detect an error in partial data of each of the plurality of read data and judging whether the partial data is correctable or not on the basis of the detected error; and a controller configured to analyze the uncorrectable partial data with respect to the plurality of read data to determine a representative value, and to transmit the representative value to the error detection and correction circuit, wherein the plurality of read data is read through a read operation with respect to a same page.
地址 Suwon-Si, Gyeonggi-Do KR