Nonvolatile semiconductor memory device and method of manufacturing the same

摘要

According to one embodiment, a memory cell string stacked body includes first memory cell transistors above a semiconductor substrate, and second memory cell transistors below a first channel semiconductor film, and one of the first memory cell transistors and one of the second memory cell transistors share with a control gate electrode. The control gate electrodes of the first memory cell transistors cover an upper surface of a first charge storage layer and at least a part of a side surface in a second direction via a first insulating film in the one of the first memory cell transistors. The control gate electrodes of the second memory cell transistors cover only a lower surface of a second charge storage layer via a second insulating film in one of the second memory cell transistors.

主权项

1. A nonvolatile semiconductor memory device comprising a first memory cell string stacked body including a first memory cell string having first memory cell transistors serially connected in a first direction above a semiconductor substrate, and a second memory cell string having second memory cell transistors serially connected in the first direction below a first channel semiconductor film, and one of the first memory cell transistors and one of the second memory cell transistors sharing with a first control gate electrode,
wherein the first control gate electrode is formed so as to cover an upper surface of a first charge storage layer and at least a part of a side surface in a second direction intersecting the first direction via a first insulating film in the one of the first memory cell transistors, and the first control gate electrode is formed so as to cover only a lower surface of a second charge storage layer via a second insulating film in the one of the second memory cell transistors.