SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element manufacturing method which can inhibit leakage current, a crystal grain boundary and surface roughness.SOLUTION: A semiconductor element manufacturing method comprises: a first process of epitaxially growing an AlN layer on a substrate; a second process of epitaxially growing AlGaInN where x+y+z is 1 and y is not 0 on the AlN layer without adding Fe to form a buffer layer; a third process of epitaxially growing AlGaInN where x+y+z is 1 and y is not 0 on the buffer layer while adding Fe to form a resistive layer; a process of epitaxially growing a channel layer on the resistive layer; a process of epitaxially growing an electron supply layer above the channel layer; and a process of forming an electrode above the electron supply layer.