发明名称 METHOD FOR MANUFACTURING VERTICALLY CONDUCTING MAGNETORESISTANCE EFFECT ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To enable to prevent dispersion of resistance and obtain a high process yield of a magnetoresistance effect element. SOLUTION: A manufacturing method comprises the steps of: forming a lower electrode 2, forming a magnetoresistance effect film 4 including a plurality of layers on the lower electrode; forming a mask 6 on the magnetoresistance effect film; patterning the magnetoresistance effect film with the mask; forming a high resistive film 10 having higher resistance than the magnetoresistance effect film at the side of the magnetoresistance effect film as the mask remain; removing the mask; removing the high resistive film existing on the magnetoresistance effect film; an forming an upper electrode 12 on the magnetoresistance effect film.</p>
申请公布号 JP2002204003(A) 申请公布日期 2002.07.19
申请号 JP20000401037 申请日期 2000.12.28
申请人 TOSHIBA CORP 发明人 OSAWA YUICHI;KISHI MASAYUKI
分类号 G01R33/09;G11B5/39;H01C7/00;H01F10/32;H01F41/30;H01F41/34;H01L43/08;H01L43/12;(IPC1-7):H01L43/08 主分类号 G01R33/09
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