发明名称 |
METHOD FOR MANUFACTURING VERTICALLY CONDUCTING MAGNETORESISTANCE EFFECT ELEMENT |
摘要 |
<p>PROBLEM TO BE SOLVED: To enable to prevent dispersion of resistance and obtain a high process yield of a magnetoresistance effect element. SOLUTION: A manufacturing method comprises the steps of: forming a lower electrode 2, forming a magnetoresistance effect film 4 including a plurality of layers on the lower electrode; forming a mask 6 on the magnetoresistance effect film; patterning the magnetoresistance effect film with the mask; forming a high resistive film 10 having higher resistance than the magnetoresistance effect film at the side of the magnetoresistance effect film as the mask remain; removing the mask; removing the high resistive film existing on the magnetoresistance effect film; an forming an upper electrode 12 on the magnetoresistance effect film.</p> |
申请公布号 |
JP2002204003(A) |
申请公布日期 |
2002.07.19 |
申请号 |
JP20000401037 |
申请日期 |
2000.12.28 |
申请人 |
TOSHIBA CORP |
发明人 |
OSAWA YUICHI;KISHI MASAYUKI |
分类号 |
G01R33/09;G11B5/39;H01C7/00;H01F10/32;H01F41/30;H01F41/34;H01L43/08;H01L43/12;(IPC1-7):H01L43/08 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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