发明名称 FORMING METHOD OF ELECTRODE
摘要 PROBLEM TO BE SOLVED: To easily form an electrode consisting a Sn-Ag three-dimensional based solder. SOLUTION: The forming method of the electrode includes a process for forming a laminated film consisting of an Ag plated film 109 and an Sn plated film 111 formed by using an electrolytic plating method on an Ni/Pd laminated film 106 exposed on the bottom part of the opening 108 of a resist film 107 selectively respectively, a process for removing the resist film 107 and the Ni/Pd laminated film 106 and selectively forming a natural oxidation film 201 on the surface of the exposed Ni/Pd laminated film 106, a process for forming a Cu plated film 110 on the surface of the laminated films 109, 111 by using the electrolytic plating method in the state that the natural oxidation film 201 is formed, a process for making the laminated films 109, 111 and the Cu plated film 110 alloy and forming a solder bump 112, and a process for making the solder bump 112 a mask and removing a Ti film 105.
申请公布号 JP2002203868(A) 申请公布日期 2002.07.19
申请号 JP20000399292 申请日期 2000.12.27
申请人 TOSHIBA CORP 发明人 MIYATA MASAHIRO;EZAWA HIROKAZU
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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